tip105 pnp silicon power darlington transistor n stmicroelectronics preferred salestype n integrated antiparallel collector-emitter diode n h fe classification applications n linear and switching industrial equipment n audio power amplifier n general power switching n dc-ac converter n easy driver for low voltage dc motor description the tip105 is a silicon epitaxial-base pnp transistor in monolithic darlington configuration mounted in to-220 plastic package intented for use in power linear and switching applications. the preferred complementary npn type is the tip102. ? internal schematic diagram april 2003 absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) -60 v v ceo collector-emitter voltage (i b = 0) -60 v v ebo emitter-base voltage (i c = 0) -5 v i c collector current -8 a i cm collector peak current -15 a i b base current -1 a p tot total dissipation at t case 25 o c t amb 25 o c 80 2 w w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c r 1 typ. = 5 k w r 2 typ. = 150 w 1 2 3 to-220 1/5
thermal data r thj-case r thj-amb thermal resistance junction-case max thermal resistance junction-ambient max 1.56 62.5 o c/w o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i ceo collector cut-off current (i b = 0) v ce = -30 v -50 m a i cbo collector cut-off current (i e = 0) v ce = -60 v -50 m a i ebo emitter cut-off current (i c = 0) v eb = -5 v -8 ma v ceo(sus) * collector-emitter sustaining voltage (i b = 0) i c = -30 ma -60 v v ce(sat) * collector-emitter saturation voltage i c = -3 a i b = -6 ma i c = -8 a i b = -80 ma -2 -2.5 v v v be * base-emitter voltage i c = -8 a v ce = -4 v -2.8 v h fe * dc current gain i c = -3 a v ce = -4 v i c = -8 a v ce = -4 v i c = -3 a v ce = -4 v group r group o group y 2000 200 2000 4000 8000 18000 5000 9000 18000 v f * forward voltage of commutation diode (i b = 0) i f = - i c = 10 a -2.8 v the product is pre-selected in dc current gain (group r, group o and group y). stmicroelectronics reserves the right to ship either groups according to production availability. please contact your nearest stmicrolectronics sales office for delivery datails. safe operating area dc current gain tip105 2/5
collector-emitter saturation voltage collector-emitter saturation voltage tip105 3/5
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.052 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.202 g1 2.40 2.70 0.094 0.106 h2 10.00 10.40 0.394 0.409 l2 16.40 0.645 l4 13.00 14.00 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.260 l9 3.50 3.93 0.137 0.154 m 2.60 0.102 dia. 3.75 3.85 0.147 0.151 p011ci to-220 mechanical data tip105 4/5
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2003 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com tip105 5/5
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